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G2R120MT33J Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Mounting Type Surface Mount
Package / Case TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Supplier Device Package TO-263-7
Mfr GeneSiC Semiconductor
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 35A
Drive Voltage (Max Rds On, Min Rds On) 20V
Power Dissipation (Max) -
Base Product Number G2R120
Continuous Drain Current Id 35A
Vds - Drain-Source Breakdown Voltage 3.3 kV
Typical Turn-On Delay Time 96 ns
Vgs th - Gate-Source Threshold Voltage 4.5 V
Pd - Power Dissipation 366 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 20 V
Unit Weight 0.056438 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 50
Mounting Styles SMD/SMT
Forward Transconductance - Min 5.8 S
Channel Mode Enhancement
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
Qg - Gate Charge 130 nC
Rds On - Drain-Source Resistance 120 mOhms
RoHS Details
Typical Turn-Off Delay Time 35 ns
Id - Continuous Drain Current 34 A
Operating Temperature -55°C ~ 175°C (TJ)
Packaging Tube
Type SiC MOSFET
Subcategory MOSFETs
Configuration Single
Number of Channels 1 ChannelChannel
Power Dissipation 402W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 156mOhm @ 20A, 20V
Vgs(th) (Max) @ Id -
Input Capacitance (Ciss) (Max) @ Vds 3706 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 145 nC @ 20 V
Rise Time 26 ns
Drain to Source Voltage (Vdss) 3300 V
Vgs (Max) +25V, -10V
Product Type MOSFET
Transistor Type MOSFET
Channel Type N Channel
FET Feature -
Product MOSFET
Product Category MOSFET
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