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G2R50MT33K Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4
Mfr GeneSiC Semiconductor
Package Tube
Product Status Active
Current - Continuous Drain (Id) @ 25℃ 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Power Dissipation (Max) 536W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50mOhm @ 40A, 20V
Vgs(th) (Max) @ Id 3.5V @ 10mA (Typ)
Input Capacitance (Ciss) (Max) @ Vds 7301 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 340 nC @ 20 V
Drain to Source Voltage (Vdss) 3300 V
Vgs (Max) +25V, -10V
FET Feature Standard
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