GeneSiC Semiconductor G3R12MT12K Single MOSFETs Transistors
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G3R12MT12K Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | GeneSiC Semiconductor | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-4 | |
| Supplier Device Package | TO-247-4 | |
| Mfr | GeneSiC Semiconductor | |
| Package | Tube | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 157A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V | |
| Power Dissipation (Max) | 567W (Tc) | |
| Base Product Number | G3R12M | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V | |
| Pd - Power Dissipation | 567 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 10 V, + 22 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 30 | |
| Mounting Styles | SMD/SMT | |
| Channel Mode | Enhancement |
| Manufacturer | GeneSiC Semiconductor | |
| Brand | GeneSiC Semiconductor | |
| Qg - Gate Charge | 288 nC | |
| Rds On - Drain-Source Resistance | 12 mOhms | |
| RoHS | Details | |
| Id - Continuous Drain Current | 111 A | |
| Series | - | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Subcategory | MOSFETs | |
| Number of Channels | 1 ChannelChannel | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 100A, 18V | |
| Vgs(th) (Max) @ Id | 2.7V @ 50mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 9335 pF @ 800 V | |
| Gate Charge (Qg) (Max) @ Vgs | 288 nC @ 15 V | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Vgs (Max) | +22V, -10V | |
| Product Type | MOSFET | |
| FET Feature | - | |
| Product | MOSFET | |
| Product Category | MOSFET |
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