GeneSiC Semiconductor G3R160MT12D Single MOSFETs Transistors
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G3R160MT12D Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | GeneSiC Semiconductor | |
| Package / Case | QFN | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-247-3 | |
| Standard Frequency | 25 | |
| Operating Temp Range | -20C to 70C | |
| Operating Supply Voltage (Max) | 3.63(V) | |
| Operating Supply Voltage (Min) | 2.25(V) | |
| Programmable | No | |
| Continuous Drain Current Id | 22A | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Typical Turn-On Delay Time | 16 ns | |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V | |
| Pd - Power Dissipation | 106 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 175 C | |
| Vgs - Gate-Source Voltage | - 5 V, + 15 V | |
| Unit Weight | 0.211644 oz | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 30 | |
| Mounting Styles | Through Hole | |
| Forward Transconductance - Min | 4.4 S | |
| Channel Mode | Enhancement | |
| Manufacturer | GeneSiC Semiconductor | |
| Brand | GeneSiC Semiconductor | |
| Qg - Gate Charge | 23 nC | |
| Rds On - Drain-Source Resistance | 160 mOhms | |
| RoHS | Details | |
| Typical Turn-Off Delay Time | 16 ns | |
| Id - Continuous Drain Current | 19 A | |
| Package | Tube |
| Base Product Number | G3R160 | |
| Current - Continuous Drain (Id) @ 25℃ | 22A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 15V | |
| Mfr | GeneSiC Semiconductor | |
| Power Dissipation (Max) | 123W (Tc) | |
| Product Status | Active | |
| Packaging | Bulk | |
| Series | G3R | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Type | CLOCK OSCILLATOR | |
| Subcategory | MOSFETs | |
| Technology | SiC | |
| Frequency Stability | ±25(ppm) | |
| Symmetry-Max | 55(%) | |
| Configuration | Single | |
| Number of Channels | 1 ChannelChannel | |
| Power Dissipation | 123W | |
| FET Type | N-Channel | |
| Rds On (Max) @ Id, Vgs | 192mOhm @ 10A, 15V | |
| Vgs(th) (Max) @ Id | 2.69V @ 5mA | |
| Input Capacitance (Ciss) (Max) @ Vds | 730 pF @ 800 V | |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 15 V | |
| Rise Time | 9 ns | |
| Drain to Source Voltage (Vdss) | 1200 V | |
| Vgs (Max) | ±15V | |
| Product Type | MOSFET | |
| Transistor Type | MOSFET | |
| Channel Type | N Channel | |
| FET Feature | - | |
| Product | MOSFET | |
| Product Category | MOSFET |
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