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G3R20MT12N Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Package / Case QFN
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Standard Frequency 50
Operating Temp Range -40C to 85C
Operating Supply Voltage (Max) 2.75(V)
Operating Supply Voltage (Min) 2.25(V)
Programmable No
Continuous Drain Current Id 105A
Package Tube
Base Product Number G3R20
Current - Continuous Drain (Id) @ 25℃ 105A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 365W (Tc)
Product Status Active
Id - Continuous Drain Current 93 A
Rds On - Drain-Source Resistance 20 mOhms
Qg - Gate Charge 180 nC
Channel Mode Enhancement
Mounting Styles SMD/SMT
Minimum Operating Temperature - 55 C
Vgs - Gate-Source Voltage - 5 V, + 15 V
Maximum Operating Temperature + 175 C
Transistor Polarity N-Channel
Pd - Power Dissipation 338 W
Vgs th - Gate-Source Threshold Voltage 2.7 V
Vds - Drain-Source Breakdown Voltage 1.2 kV
Packaging Bulk
Operating Temperature -55°C ~ 175°C (TJ)
Series G3R™
Type CLOCK OSCILLATOR
Technology SiCFET (Silicon Carbide)
Frequency Stability ±50(ppm)
Symmetry-Max 55(%)
Number of Channels 1 ChannelChannel
Power Dissipation 365W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 15V
Vgs(th) (Max) @ Id 2.69V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 5873 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 219 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +20V, -10V
Channel Type N Channel
FET Feature -
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