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G3R20MT17N Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Package / Case QFN
Mounting Type Chassis Mount
Supplier Device Package SOT-227
Standard Frequency 66
Operating Temp Range -40C to 85C
Programmable No
Operating Supply Voltage (Min) 2.25(V)
Operating Supply Voltage (Max) 2.75(V)
Continuous Drain Current Id 100A
Vds - Drain-Source Breakdown Voltage 1.7 kV
Typical Turn-On Delay Time 117 ns
Vgs th - Gate-Source Threshold Voltage 2.7 V
Pd - Power Dissipation 476 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 15 V
Unit Weight 1 oz
Minimum Operating Temperature - 55 C
Factory Pack QuantityFactory Pack Quantity 10
Mounting Styles SMD/SMT
Forward Transconductance - Min 38.6 S
Channel Mode Enhancement
Manufacturer GeneSiC Semiconductor
Brand GeneSiC Semiconductor
Qg - Gate Charge 256 nC
Rds On - Drain-Source Resistance 20 mOhms
RoHS Details
Typical Turn-Off Delay Time 134 ns
Id - Continuous Drain Current 92 A
Package Tube
Base Product Number G3R20
Current - Continuous Drain (Id) @ 25℃ 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 523W (Tc)
Product Status Active
Packaging Bulk
Series G3R
Operating Temperature -55°C ~ 175°C (TJ)
Type CLOCK OSCILLATOR
Subcategory MOSFETs
Technology SiC
Frequency Stability ±25(ppm)
Symmetry-Max 55(%)
Configuration Single
Number of Channels 1 ChannelChannel
Load Capacitance 15(pF)
Power Dissipation 523W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 26mOhm @ 75A, 15V
Vgs(th) (Max) @ Id 2.7V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds 10187 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 400 nC @ 15 V
Rise Time 129 ns
Drain to Source Voltage (Vdss) 1700 V
Vgs (Max) ±15V
Product Type MOSFET
Transistor Type MOSFET
Channel Type N Channel
FET Feature -
Product MOSFET
Product Category MOSFET
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