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G3R40MT12D Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Package / Case 48-TFSOP (0.240, 6.10mm Width)
Mounting Type Surface Mount
Supplier Device Package 48-TSSOP
Frequency-Max 220MHz
Continuous Drain Current Id 71A
Package Tube
Base Product Number G3R40
Current - Continuous Drain (Id) @ 25℃ 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 333W (Tc)
Product Status Active
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 2.7 V
Pd - Power Dissipation 297 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 15 V
Minimum Operating Temperature - 55 C
Mounting Styles Through Hole
Channel Mode Enhancement
Qg - Gate Charge 88 nC
Rds On - Drain-Source Resistance 40 mOhms
Id - Continuous Drain Current 63 A
Operating Temperature 0°C ~ 70°C
Series --
Packaging Tape & Reel (TR)
Part Status Active
Technology SiCFET (Silicon Carbide)
Voltage - Supply 3.135 V ~ 3.465 V
Base Part Number ICS9DB108
Output Clock
Number of Channels 1 ChannelChannel
Number of Circuits 1Circuit
Power Dissipation 333W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 48mOhm @ 35A, 15V
Vgs(th) (Max) @ Id 2.69V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±15V
Input Clock
Ratio - Input:Output 1:8
PLL Yes
Differential - Input:Output Yes/Yes
Channel Type N Channel
Main Purpose PCI Express (PCIe)
FET Feature -
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