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G3R40MT12J Tech Specifications

Category Transistors - FETs, MOSFETs - Single
Manufacturer GeneSiC Semiconductor
Mounting Type Surface Mount
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Supplier Device Package TO-263-7
Continuous Drain Current Id 75A
Package Tube
Base Product Number G3R40
Current - Continuous Drain (Id) @ 25℃ 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V
Mfr GeneSiC Semiconductor
Power Dissipation (Max) 374W (Tc)
Product Status Active
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 2.7 V
Pd - Power Dissipation 330 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 15 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Channel Mode Enhancement
Qg - Gate Charge 88 nC
Rds On - Drain-Source Resistance 40 mOhms
Id - Continuous Drain Current 66 A
Operating Temperature -55°C ~ 175°C (TJ)
Series G3R™
Technology SiCFET (Silicon Carbide)
Number of Channels 1 ChannelChannel
Power Dissipation 374W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 48mOhm @ 35A, 15V
Vgs(th) (Max) @ Id 2.69V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 2929 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 106 nC @ 15 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) ±15V
Channel Type N Channel
FET Feature -
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