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GB02SLT12-252 Tech Specifications
Category | Diodes - Rectifiers - Single | |
Manufacturer | GeneSiC Semiconductor | |
Lifecycle Status | PRODUCTION (Last Updated: 6 months ago) | |
Factory Lead Time | 49 Weeks | |
Mount | Surface Mount | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Number of Pins | 3Pins | |
Number of Elements | 1 Element | |
Packaging | Cut Tape (CT) | |
Published | 2015 | |
Pbfree Code | yes | |
Part Status | Active | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
ECCN Code | EAR99 | |
Max Operating Temperature | 175°C | |
Min Operating Temperature | -55°C | |
HTS Code | 8541.10.00.80 | |
Capacitance | 127pF | |
Element Configuration | Single | |
Speed | No Recovery Time > 500mA (Io) |
Diode Type | Silicon Carbide Schottky | |
Current - Reverse Leakage @ Vr | 50μA @ 1200V | |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 2A | |
Forward Current | 2A | |
Operating Temperature - Junction | -55°C~175°C | |
Output Current-Max | 2A | |
Voltage - DC Reverse (Vr) (Max) | 1200V | |
Current - Average Rectified (Io) | 5A DC | |
Max Reverse Voltage (DC) | 1.2kV | |
Average Rectified Current | 5A | |
Reverse Recovery Time | 0ns | |
Peak Reverse Current | 200nA | |
Max Repetitive Reverse Voltage (Vrrm) | 1.2kV | |
Capacitance @ Vr, F | 131pF @ 1V 1MHz | |
Max Forward Surge Current (Ifsm) | 200A | |
Max Junction Temperature (Tj) | 175°C | |
Natural Thermal Resistance | 2.3 °C/W | |
Height | 2.385mm | |
REACH SVHC | No SVHC | |
RoHS Status | RoHS Compliant |
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