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MBR400100CTR Tech Specifications

Category Diodes - Rectifiers - Arrays
Manufacturer GeneSiC Semiconductor
Factory Lead Time 4 Weeks
Mount Chassis Mount, Through Hole
Mounting Type Chassis Mount
Package / Case Twin Tower
Number of Pins 2Pins
Diode Element Material SILICON
Number of Elements 2 Elements
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Termination Solder
Max Operating Temperature 175°C
Min Operating Temperature -40°C
Applications POWER
Pitch 4.2mm
Terminal Position UPPER
Orientation Straight
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Contacts 14Contacts
Element Configuration Common Anode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky, Reverse Polarity
Current - Reverse Leakage @ Vr 5mA @ 20V
Voltage - Forward (Vf) (Max) @ If 840mV @ 200A
Max Voltage Rating (DC) 600.6kV
Forward Current 200A
Max Reverse Leakage Current 1μA
Operating Temperature - Junction -55°C~150°C
Max Surge Current 3kA
Current - Average Rectified (Io) 400A DC
Forward Voltage 840mV
Max Reverse Voltage (DC) 100V
Average Rectified Current 400A
Number of Phases 1Phase
Peak Reverse Current 1A
Max Repetitive Reverse Voltage (Vrrm) 100V
Diode Configuration 1 Pair Common Anode
Max Forward Surge Current (Ifsm) 3kA
REACH SVHC No SVHC
RoHS Status RoHS Compliant
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