MUR20020CT Tech Specifications

Category Diodes - Rectifiers - Arrays
Manufacturer GeneSiC Semiconductor
Lifecycle Status PRODUCTION (Last Updated: 4 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Twin Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 175°C
Packaging Bulk
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Applications SUPER FAST RECOVERY
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X2
Element Configuration Common Cathode
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Schottky
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 100A
Forward Current 200A
Operating Temperature - Junction -55°C~150°C
Max Surge Current 800A
Output Current-Max 100A
Current - Average Rectified (Io) 200A DC
Max Reverse Voltage (DC) 200V
Average Rectified Current 200A
Number of Phases 1Phase
Reverse Recovery Time 75 ns
Peak Reverse Current 25μA
Reverse Voltage 200V
Diode Configuration 1 Pair Common Cathode
RoHS Status RoHS Compliant
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