MURT10010R Tech Specifications

Category Diodes - Rectifiers - Arrays
Manufacturer GeneSiC Semiconductor
Lifecycle Status PRODUCTION (Last Updated: 5 months ago)
Factory Lead Time 6 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Three Tower
Diode Element Material SILICON
Number of Elements 2 Elements
Operating Temperature (Max.) 150°C
Operating Temperature (Min.) -55°C
Packaging Bulk
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Applications SUPER FAST RECOVERY
HTS Code 8541.10.00.80
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-PUFM-X3
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 25μA @ 50V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 50A
Case Connection ISOLATED
Max Surge Current 400A
Output Current-Max 50A
Current - Average Rectified (Io) 100A DC
Max Reverse Voltage (DC) 100V
Average Rectified Current 100A
Number of Phases 1Phase
Reverse Recovery Time 75 ns
Peak Reverse Current 25μA
Non-rep Pk Forward Current-Max 1500A
Reverse Voltage 100V
Diode Configuration 1 Pair Common Anode
RoHS Status RoHS Compliant
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MURT10010R Documents

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