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GD25Q80CEIGR Tech Specifications

Category Memory
Manufacturer GigaDevice
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case 8-XFDFN Exposed Pad
Surface Mount YES
Memory Types Non-Volatile
Operating Temperature -40°C~85°C TA
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 8Terminations
Voltage - Supply 2.7V~3.6V
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1Function
Supply Voltage 3.3V
Terminal Pitch 0.5mm
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-N8
Supply Voltage-Max (Vsup) 3.6V
Supply Voltage-Min (Vsup) 2.7V
Memory Size 8Mb 1M x 8
Operating Mode SYNCHRONOUS
Clock Frequency 120MHz
Memory Format FLASH
Memory Interface SPI - Quad I/O
Organization 8MX1
Memory Width 1
Write Cycle Time - Word, Page 50μs, 2.4ms
Memory Density 8388608 bit
Parallel/Serial SERIAL
Programming Voltage 3.3V
Length 3mm
Height Seated (Max) 0.5mm
Width 2mm
RoHS Status ROHS3 Compliant
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GD25Q80CEIGR Documents

Download datasheets and manufacturer documentation for   GD25Q80CEIGR

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