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- GS8161E18DGT-333I
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GS8161E18DGT-333I Tech Specifications
Category | Memory | |
Manufacturer | GSI | |
Package / Case | TQFP-100 | |
Maximum Clock Rate | 333 MHz | |
Supplier Package | TQFP | |
Data Rate Architecture | SDR | |
Typical Operating Supply Voltage | 2.5, 3.3 V | |
Minimum Operating Supply Voltage | 2.3, 3 V | |
Timing Type | Synchronous | |
Number of Words | 1 MWordsWord | |
Number of I/O Lines | 18 BitI/O Line | |
Mounting | Surface Mount | |
Maximum Operating Supply Voltage | 2.7, 3.6 V | |
Moisture Sensitive | Yes | |
Maximum Clock Frequency | 333 MHz | |
Maximum Operating Temperature | + 85 C | |
Supply Voltage-Max | 3.6 V | |
Minimum Operating Temperature | - 40 C | |
Factory Pack QuantityFactory Pack Quantity | 36 | |
Supply Voltage-Min | 2.3 V | |
Mounting Styles | SMD/SMT | |
Interface Type | Parallel | |
Manufacturer | GSI Technology |
Brand | GSI Technology | |
Tradename | SyncBurst | |
RoHS | Details | |
Memory Types | SDR | |
Usage Level | Industrial grade | |
Operating Temperature | -40 to 70 °C | |
Series | GS8161E18DGT | |
Packaging | Tray | |
Type | DCD Pipeline/Flow Through | |
Subcategory | Memory & Data Storage | |
Pin Count | 100 | |
Memory Size | 18 Mbit | |
Number of Ports | 2Ports | |
Supply Current-Max | 260 mA, 305 mA | |
Access Time | 4.5 ns | |
Architecture | Flow-Through/Pipelined | |
Organization | 1 M x 18 | |
Address Bus Width | 20 Bit | |
Product Type | SRAM | |
Density | 18 Mbit | |
Screening Level | Industrial | |
Product Category | SRAM |
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