GE10022 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer HARRIS
Mounting Type Through Hole
Package / Case TO-204AE
Surface Mount NO
Supplier Device Package TO-204AE
Number of Terminals 2Terminals
Transistor Element Material SILICON
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 40 A
RoHS Non-Compliant
Package Style FLANGE MOUNT
Moisture Sensitivity Levels NOT SPECIFIED
Package Body Material METAL
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code No
Manufacturer Part Number GE10022
Package Shape ROUND
Manufacturer Rochester Electronics LLC
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Risk Rank 5.49
Series -
Operating Temperature -65°C ~ 200°C (TJ)
JESD-609 Code e0
Pbfree Code No
Terminal Finish TIN LEAD
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code O-MBFM-P2
Qualification Status COMMERCIAL
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Case Connection COLLECTOR
Power - Max 250 W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 10A, 5V
Current - Collector Cutoff (Max) 250μA
JEDEC-95 Code TO-204AE
Vce Saturation (Max) @ Ib, Ic 2.5V @ 1A, 20A
Voltage - Collector Emitter Breakdown (Max) 240 V
Frequency - Transition -
Collector Current-Max (IC) 40 A
DC Current Gain-Min (hFE) 50
Collector-Emitter Voltage-Max 350 V
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