Harris Corporation HFA3127MJ/883 RF BJT Transistors
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HFA3127MJ/883 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | HARRIS | |
| Mounting Type | Through Hole | |
| Package / Case | 16-CDIP (0.300", 7.62mm) | |
| Supplier Device Package | 16-CERDIP | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Product Status | Active | |
| Current-Collector (Ic) (Max) | 65mA |
| Series | - | |
| Operating Temperature | -55°C ~ 125°C (TJ) | |
| Power - Max | 150mW | |
| Transistor Type | 5 NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 2V | |
| Gain | - | |
| Voltage - Collector Emitter Breakdown (Max) | 12V | |
| Frequency - Transition | 8GHz | |
| Noise Figure (dB Typ @ f) | 3.5dB @ 1GHz |
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