HGTD7N60B3 Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer HARRIS
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount NO
Supplier Device Package I-PAK
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 14 A
Test Conditions 480V, 7A, 50Ohm, 15V
RoHS Non-Compliant
Package Style IN-LINE
Moisture Sensitivity Levels NOT SPECIFIED
Package Body Material PLASTIC/EPOXY
Reflow Temperature-Max (s) NOT SPECIFIED
Rohs Code No
Manufacturer Part Number HGTD7N60B3
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Risk Rank 5.64
Series -
Operating Temperature -55°C ~ 150°C (TJ)
JESD-609 Code e0
Pbfree Code No
Terminal Finish TIN LEAD
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
JESD-30 Code R-PSIP-T3
Qualification Status COMMERCIAL
Configuration SINGLE
Input Type Standard
Power - Max 60 W
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-251AA
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 7A
IGBT Type -
Collector-Emitter Voltage-Max 600 V
Gate Charge 30 nC
Current - Collector Pulsed (Icm) 56 A
Td (on/off) @ 25°C 26ns/130ns
Switching Energy 160μJ (on), 120μJ (off)
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