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HGTG27N60C3DR Tech Specifications

Category Transistors - IGBTs - Single
Manufacturer HARRIS
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Supplier Device Package TO-247
Number of Terminals 3Terminals
Transistor Element Material SILICON
Mfr Harris Corporation
Package Bulk
Product Status Active
Current-Collector (Ic) (Max) 54 A
Test Conditions -
Package Style FLANGE MOUNT
Package Body Material PLASTIC/EPOXY
Turn-on Time-Nom (ton) 38 ns
Turn-off Time-Nom (toff) 250 ns
Manufacturer Part Number HGTG27N60C3DR
Package Shape RECTANGULAR
Manufacturer Rochester Electronics LLC
Number of Elements 1 Element
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Risk Rank 5.68
Series -
Operating Temperature -40°C ~ 150°C (TJ)
Additional Feature LOW CONDUCTION LOSS, ULTRA FAST SWITCHING
Terminal Position SINGLE
Terminal Form THROUGH-HOLE
Reach Compliance Code unknown
JESD-30 Code R-PSFM-T3
Qualification Status COMMERCIAL
Configuration SINGLE WITH BUILT-IN DIODE
Case Connection COLLECTOR
Input Type Standard
Power - Max 208 W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
JEDEC-95 Code TO-247
Voltage - Collector Emitter Breakdown (Max) 600 V
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 27A
Collector Current-Max (IC) 54 A
IGBT Type -
Collector-Emitter Voltage-Max 600 V
Gate Charge 212 nC
Current - Collector Pulsed (Icm) 108 A
Td (on/off) @ 25°C -
Switching Energy -
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