Harris Corporation IRFP245 Single MOSFETs Transistors
56 A
IN STOCK
: 449
Min. : 1
Mult. : 1
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IRFP245 Tech Specifications
| Category | Transistors - FETs, MOSFETs - Single | |
| Manufacturer | HARRIS | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Supplier Device Package | TO-247 | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Mfr | Harris Corporation | |
| Package | Bulk | |
| Product Status | Active | |
| Current - Continuous Drain (Id) @ 25℃ | 14A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Power Dissipation (Max) | 150W (Tc) | |
| RoHS | Non-Compliant | |
| Package Style | FLANGE MOUNT | |
| Moisture Sensitivity Levels | NOT SPECIFIED | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Manufacturer Part Number | IRFP245 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Rochester Electronics LLC | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Risk Rank | 5.35 | |
| Drain Current-Max (ID) | 14 A | |
| Series | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| JESD-609 Code | e0 | |
| Pbfree Code | No | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | COMMERCIAL | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| FET Type | N-Channel | |
| Transistor Application | SWITCHING | |
| Rds On (Max) @ Id, Vgs | 340mOhm @ 10A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250μA | |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 59 nC @ 10 V | |
| Drain to Source Voltage (Vdss) | 250 V | |
| Vgs (Max) | ±20V | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-247 | |
| Drain-source On Resistance-Max | 0.34 Ω | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| DS Breakdown Voltage-Min | 250 V | |
| Avalanche Energy Rating (Eas) | 550 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| FET Feature | - |
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