Harris Semiconductor HUF76121D3ST Specialized Transistors
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HUF76121D3ST Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | HARRIS | |
| Surface Mount | YES | |
| Housing material | PA66, white | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Gross weight | 2.92 | |
| Transport packaging size/quantity | 42*28*23.5/3000 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Drain Current-Max (ID) | 20 A | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Noal voltage | 12/24 (DC) Vmin | |
| Wire cross-section | 0.3…0.85 mm2 | |
| Number of terals | 2, blade terminal 6.3 mm non-insulatedminteral | |
| ECCN Code | EAR99 |
| Type | connector (socket) series 7022 | |
| Additional Feature | LOGIC LEVEL COMPATIBLE | |
| Terminal Position | SINGLE | |
| Terminal Form | GULL WING | |
| Depth | 25 mm | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSSO-G2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Operating temperature range | -40…+120 °C | |
| JEDEC-95 Code | TO-252AA | |
| Drain-source On Resistance-Max | 0.033 Ω | |
| DS Breakdown Voltage-Min | 30 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Height | 18.5 (body) mm | |
| Width | 10 mm |
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HUF76121D3ST Documents
Download datasheets and manufacturer documentation for HUF76121D3ST
- Datasheets9ec613a2705847a9e1eaa6f79cb72679.pdf
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