Harris Semiconductor IRF9640 Specialized Transistors
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IRF9640 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | HARRIS | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Drain Current-Max (ID) | 11 A | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Max (toff) | 134 ns | |
| Turn-on Time-Max (ton) | 90 ns | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | TO-220AB | |
| Drain-source On Resistance-Max | 0.5 Ω | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| DS Breakdown Voltage-Min | 200 V | |
| Avalanche Energy Rating (Eas) | 790 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 125 W | |
| Power Dissipation Ambient-Max | 125 W |
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IRF9640 Documents
Download datasheets and manufacturer documentation for IRF9640
- Datasheets2c0334d8667ff7251f4a4e82b78f1e5f.pdf
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