Harris Semiconductor IRFD223 Specialized Transistors
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IRFD223
| Transistors - Special Purpose | ||
| HARRIS | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | IN-LINE, R-PDIP-T3 | |
| Drain Current-Max (ID) | 0.7 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| JESD-609 Code | e0 |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Terminal Position | DUAL | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PDIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 1.2 Ω | |
| DS Breakdown Voltage-Min | 150 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 1 W |
IRFD223
Download datasheets and manufacturer documentation for IRFD223
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