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IRFP9140 Tech Specifications
Category | Transistors - Special Purpose | |
Manufacturer | HARRIS | |
Surface Mount | NO | |
Number of Terminals | 3Terminals | |
Transistor Element Material | SILICON | |
Exterior Housing Material | 1 | |
Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Drain Current-Max (ID) | 19 A | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Turn-off Time-Max (toff) | 140 ns | |
Turn-on Time-Max (ton) | 120 ns | |
JESD-609 Code | e0 | |
ECCN Code | EAR99 | |
Terminal Finish | TIN LEAD |
HTS Code | 8541.29.00.95 | |
Terminal Position | SINGLE | |
Terminal Form | THROUGH-HOLE | |
Reach Compliance Code | unknown | |
JESD-30 Code | R-PSFM-T3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | DRAIN | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | P-CHANNEL | |
JEDEC-95 Code | TO-247 | |
Drain-source On Resistance-Max | 0.2 Ω | |
Pulsed Drain Current-Max (IDM) | 76 A | |
DS Breakdown Voltage-Min | 100 V | |
Avalanche Energy Rating (Eas) | 960 mJ | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 180 W | |
Power Dissipation Ambient-Max | 150 W |
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IRFP9140 Documents
Download datasheets and manufacturer documentation for IRFP9140
- Datasheets82b1577897800c0c0e3c1106796079ba.pdf
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