Harris Semiconductor JANTX2N6851 Specialized Transistors
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JANTX2N6851 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | HARRIS | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Exterior Housing Material | 1 | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | TO-39, 3 PIN | |
| Drain Current-Max (ID) | 4 A | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Turn-off Time-Max (toff) | 160 ns | |
| Turn-on Time-Max (ton) | 150 ns | |
| ECCN Code | EAR99 |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| JEDEC-95 Code | TO-205AF | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| DS Breakdown Voltage-Min | 200 V | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 25 W | |
| Feedback Cap-Max (Crss) | 50 pF |
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JANTX2N6851 Documents
Download datasheets and manufacturer documentation for JANTX2N6851
- Datasheets8e7b9bfdd6276bc6f93c2d767d888707.pdf
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