Harris Semiconductor RFM10N12 Specialized Transistors
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RFM10N12 Tech Specifications
| Category | Transistors - Special Purpose | |
| Manufacturer | HARRIS | |
| Surface Mount | NO | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Package Description | FLANGE MOUNT, O-MBFM-P2 | |
| Drain Current-Max (ID) | 10 A | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Turn-off Time-Max (toff) | 270 ns | |
| Turn-on Time-Max (ton) | 310 ns | |
| JESD-609 Code | e0 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD |
| HTS Code | 8541.29.00.95 | |
| Terminal Position | BOTTOM | |
| Terminal Form | PIN/PEG | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | O-MBFM-P2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | DRAIN | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-204AA | |
| Drain-source On Resistance-Max | 0.3 Ω | |
| Pulsed Drain Current-Max (IDM) | 25 A | |
| DS Breakdown Voltage-Min | 120 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 75 W | |
| Feedback Cap-Max (Crss) | 100 pF | |
| Power Dissipation Ambient-Max | 75 W |
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RFM10N12 Documents
Download datasheets and manufacturer documentation for RFM10N12
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