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HAT2024R Tech Specifications
Category | Transistors - FETs, MOSFETs - Single | |
Manufacturer | HITACHI | |
Surface Mount | YES | |
Number of Terminals | 8Terminals | |
Transistor Element Material | SILICON | |
Package Description | SMALL OUTLINE, R-PDSO-G8 | |
Package Style | SMALL OUTLINE | |
Package Body Material | PLASTIC/EPOXY | |
Operating Temperature-Max | 150 °C | |
Manufacturer Part Number | HAT2024R | |
Package Shape | RECTANGULAR | |
Manufacturer | Hitachi Ltd | |
Number of Elements | 2 Elements | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | HITACHI LTD | |
Risk Rank | 5.35 | |
Part Package Code | SOIC | |
Drain Current-Max (ID) | 5.5 A | |
ECCN Code | EAR99 |
Subcategory | FET General Purpose Power | |
Terminal Position | DUAL | |
Terminal Form | GULL WING | |
Reach Compliance Code | unknown | |
Pin Count | 8 | |
JESD-30 Code | R-PDSO-G8 | |
Qualification Status | Not Qualified | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Transistor Application | SWITCHING | |
Polarity/Channel Type | N-CHANNEL | |
JEDEC-95 Code | MS-012AA | |
Drain Current-Max (Abs) (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.11 Ω | |
Pulsed Drain Current-Max (IDM) | 44 A | |
DS Breakdown Voltage-Min | 30 V | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 2 W |
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