Inchange Semiconductor Company Ltd 2SA1332 Single BJT Transistors
60 160 V 1.5 A 20 W
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2SA1332 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | INCHANGE | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | INCHANGE SEMICONDUCTOR CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Transition Frequency-Nom (fT) | 200 MHz | |
| ECCN Code | EAR99 |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE | |
| Case Connection | ISOLATED | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| JEDEC-95 Code | TO-220AB | |
| Power Dissipation-Max (Abs) | 20 W | |
| Collector Current-Max (IC) | 1.5 A | |
| DC Current Gain-Min (hFE) | 60 | |
| Collector-Emitter Voltage-Max | 160 V | |
| VCEsat-Max | 1.5 V |
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2SA1332 Documents
Download datasheets and manufacturer documentation for 2SA1332
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