Inchange Semiconductor Company Ltd 2SD612KF Single BJT Transistors
160 2 A 35 V 10 W
IN STOCK
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Mult. : 1
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2SD612KF Tech Specifications
| Category | Transistors - Bipolar (BJT) - Single | |
| Manufacturer | INCHANGE | |
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Contact Manufacturer | |
| Ihs Manufacturer | INCHANGE SEMICONDUCTOR CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Number of Elements | 1 Element | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Transition Frequency-Nom (fT) | 100 MHz | |
| ECCN Code | EAR99 | |
| Terminal Position | SINGLE |
| Terminal Form | THROUGH-HOLE | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PSFM-T3 | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| JEDEC-95 Code | TO-126 | |
| Power Dissipation-Max (Abs) | 10 W | |
| Collector Current-Max (IC) | 2 A | |
| DC Current Gain-Min (hFE) | 160 | |
| Collector-Emitter Voltage-Max | 35 V | |
| VCEsat-Max | 0.8 V | |
| Collector-Base Capacitance-Max | 30 pF | |
| Power Dissipation Ambient-Max | 1 W |
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2SD612KF Documents
Download datasheets and manufacturer documentation for 2SD612KF
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