Infineon BSM25GD100D Miscellaneous Kits
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BSM25GD100D Tech Specifications
| Category | Miscellaneous | |
| Manufacturer | Infineon | |
| Surface Mount | NO | |
| Number of Terminals | 17Terminals | |
| Transistor Element Material | SILICON | |
| Voltage, Rating | 50 V | |
| Manufacturer Part Number | BSM25GD100D | |
| Manufacturer | Infineon | |
| Package Description | FLANGE MOUNT, R-PUFM-D17 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | PLASTIC/EPOXY | |
| Turn-on Time-Nom (ton) | 30 ns | |
| Operating Temperature-Max | 150 °C | |
| Turn-on Time-Max (ton) | 40 ns | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 6 Elements | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SIEMENS A G | |
| Risk Rank | 5.27 | |
| Tolerance | 0.25 % | |
| Temperature Coefficient | 25 ppm/°C | |
| Resistance | 49.3 Ω |
| Max Operating Temperature | 155 °C | |
| Min Operating Temperature | -55 °C | |
| Composition | Thin Film | |
| Subcategory | Insulated Gate BIP Transistors | |
| Power Rating | 100 mW | |
| Terminal Position | UPPER | |
| Terminal Form | SOLDER LUG | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-PUFM-D17 | |
| Qualification Status | Not Qualified | |
| Configuration | BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE | |
| Case Connection | ISOLATED | |
| Transistor Application | POWER CONTROL | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Collector Current-Max (IC) | 25 A | |
| Collector-Emitter Voltage-Max | 1000 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| VCEsat-Max | 3.3 V | |
| Gate-Emitter Thr Voltage-Max | 6.2 V | |
| Power Dissipation Ambient-Max | 300 W | |
| Height | 550 µm |
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BSM25GD100D Documents
Download datasheets and manufacturer documentation for BSM25GD100D
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