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BAV199E6327HTSA1 Tech Specifications

Category Diodes - Rectifiers - Arrays
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Weight 200.998119mg
Diode Element Material SILICON
Breakdown Voltage / V 85V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.70
Capacitance 2pF
Power Rating 350mW
Voltage - Rated DC 70V
Max Power Dissipation 330mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BAV199
Pin Count 3
Qualification Status Not Qualified
Voltage 85V
Element Configuration Dual
Speed Small Signal =< 200mA (Io), Any Speed
Current 2A
Diode Type Standard
Current - Reverse Leakage @ Vr 5nA @ 75V
Voltage - Forward (Vf) (Max) @ If 1.25V @ 150mA
Forward Current 200mA
Max Reverse Leakage Current 5nA
Operating Temperature - Junction 150°C Max
Max Surge Current 4.5A
Current - Average Rectified (Io) 200mA DC
Forward Voltage 1.25V
Max Reverse Voltage (DC) 80V
Average Rectified Current 200mA
Reverse Recovery Time 600 ns
Peak Reverse Current 5nA
Max Repetitive Reverse Voltage (Vrrm) 75V
Peak Non-Repetitive Surge Current 4.5A
Diode Configuration 1 Pair Series Connection
Max Forward Surge Current (Ifsm) 4.5A
Recovery Time 600 ns
Height 900μm
Length 2.9mm
Width 1.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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