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BC817K40E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Infineon
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Mount Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
Number of Elements 1 Element
Collector-Emitter Saturation Voltage 700mV
Collector-Emitter Breakdown Voltage 45V
Published 2002
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 500mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 170MHz
Base Part Number BC817
Element Configuration Single
Power Dissipation 330mW
Power - Max 500mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 700mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Transition Frequency 170MHz
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Width 1.3mm
Length 2.9mm
Height 900μm
RoHS Status ROHS3 Compliant
Radiation Hardening No
Lead Free Lead Free
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