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BC846PNH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Collector-Emitter Saturation Voltage 650mV
Number of Elements 2 Elements
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC846PN
Reference Standard AEC-Q101
Polarity NPN, PNP
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type NPN, PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 65V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 6V
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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