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BC847BWH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Infineon
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 45V
Collector-Emitter Saturation Voltage 600mV
Current-Collector (Ic) (Max) 100mA
Number of Elements 1 Element
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation 250mW
Terminal Position DUAL
Terminal Form GULL WING
Frequency 250MHz
Base Part Number BC847
Element Configuration Single
Power Dissipation 250mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 600mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
Height 800μm
Length 2mm
Width 1.25mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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