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BC856SH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Collector-Emitter Saturation Voltage 250mV
Current-Collector (Ic) (Max) 100mA
Number of Elements 2 Elements
hFEMin 200
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2005
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
ECCN Code EAR99
Max Power Dissipation 250mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BC856S
Reference Standard AEC-Q101
Polarity PNP
Voltage 65V
Element Configuration Dual
Current 1A
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Gain Bandwidth Product 250MHz
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Max Frequency 250MHz
Transition Frequency 250MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 5V
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
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