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BCR08PNH6433XTMA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Infineon
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 2 Elements
Packaging Tape & Reel (TR)
Published 2007
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 1
Max Power Dissipation 250mW
Terminal Form GULL WING
Base Part Number BCR08PN
Polarity NPN, PNP
Element Configuration Dual
Transistor Application SWITCHING
Transistor Type 1 NPN, 1 PNP - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 100MHz
Frequency - Transition 170MHz
Resistor - Base (R1) 2.2k Ω
Resistor - Emitter Base (R2) 47k Ω
RoHS Status ROHS3 Compliant
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