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BCR116E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Infineon
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 70
Packaging Tape & Reel (TR)
Published 2001
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 50V
Max Power Dissipation 200mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 100mA
Base Part Number BCR116
Polarity NPN
Element Configuration Single
Power Dissipation 200mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Gain Bandwidth Product 150MHz
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 160MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
Resistor - Base (R1) 4.7 k Ω
Resistor - Emitter Base (R2) 47 k Ω
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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