BCR135SH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Manufacturer Infineon
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6Pins
Supplier Device Package PG-SOT363-6
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 300mV
Current-Collector (Ic) (Max) 100mA
hFEMin 70
Packaging Tape & Reel (TR)
Published 2011
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Max Power Dissipation 250mW
Base Part Number BCR135S
Polarity NPN
Element Configuration Dual
Power - Max 250mW
Halogen Free Halogen Free
Transistor Type 2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Voltage - Collector Emitter Breakdown (Max) 50V
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
Resistor - Base (R1) 10kOhms
Resistor - Emitter Base (R2) 47kOhms
Height 800μm
Length 2mm
Width 1.25mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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