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BCR523E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Infineon
Factory Lead Time 26 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 70
Packaging Tape & Reel (TR)
Published 2002
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6Terminations
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 50V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating 500mA
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCR523
JESD-30 Code R-PDSO-G6
Polarity NPN
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 50V
Frequency - Transition 100MHz
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
Max Junction Temperature (Tj) 150°C
Resistor - Base (R1) 1 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Height 1.1mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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