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BCR533E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Infineon
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Collector-Emitter Saturation Voltage 300mV
Number of Elements 1 Element
hFEMin 70
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Voltage - Rated DC 50V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Base Part Number BCR533
Polarity NPN
Element Configuration Single
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Gain Bandwidth Product 100MHz
Transistor Type NPN - Pre-Biased
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 100MHz
Max Breakdown Voltage 50V
Collector Base Voltage (VCBO) 50V
Max Junction Temperature (Tj) 150°C
Resistor - Base (R1) 10 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Height 1.1mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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