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BCR555E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single, Pre-Biased
Manufacturer Infineon
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Collector-Emitter Breakdown Voltage 50V
Number of Elements 1 Element
hFEMin 70
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature BUILT-IN BIAS RESISTOR RATIO 0.22
HTS Code 8541.21.00.75
Voltage - Rated DC -50V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating -500mA
Base Part Number BCR555
Polarity PNP
Element Configuration Single
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Transistor Type PNP - Pre-Biased
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transition Frequency 150MHz
Max Breakdown Voltage 50V
Frequency - Transition 150MHz
Resistor - Base (R1) 2.2 k Ω
Resistor - Emitter Base (R2) 10 k Ω
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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