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BCV47E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Infineon
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 60V
Collector-Emitter Saturation Voltage 1V
Number of Elements 1 Element
hFEMin 10000
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Voltage - Rated DC 60V
Max Power Dissipation 360mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 500mA
Base Part Number BCV47
Polarity NPN
Element Configuration Single
Power Dissipation 360mW
Halogen Free Not Halogen Free
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce 10000 @ 100mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 100μA, 100mA
Transition Frequency 170MHz
Max Breakdown Voltage 60V
Frequency - Transition 170MHz
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) 10V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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