Infineon Technologies BCV62BE6327HTSA1 Arrays BJT Transistors
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BCV62BE6327HTSA1 Tech Specifications
| Category | Transistors - Bipolar (BJT) - Arrays | |
| Manufacturer | Infineon | |
| Factory Lead Time | 4 Weeks | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-253-4, TO-253AA | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Current-Collector (Ic) (Max) | 100mA | |
| Number of Elements | 2 Elements | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2005 | |
| JESD-609 Code | e3 | |
| Part Status | Last Time Buy | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Base Part Number | BCV62 | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G4 | |
| Configuration | CURRENT MIRROR | |
| Power - Max | 300mW | |
| Polarity/Channel Type | PNP | |
| Transistor Type | 2 PNP (Dual) | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA 5V | |
| Current - Collector Cutoff (Max) | 15nA ICBO | |
| Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 30V | |
| Transition Frequency | 250MHz | |
| Frequency - Transition | 250MHz | |
| RoHS Status | ROHS3 Compliant |
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BCV62BE6327HTSA1 Documents
Download datasheets and manufacturer documentation for BCV62BE6327HTSA1
- PCN Obsolescence/ EOLMulti Device EOL 4/Feb/2016 Mult Dev EOL 17/Dec/2018 Mult Dev LTB Rev 17/Dec/2018
- DatasheetsBCV62
- Other Related DocumentsPart Number Guide
- PCN PackagingCarrier Tape Update 03/Jun/2015
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