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BCV62CE6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Arrays
Manufacturer Infineon
Factory Lead Time 4 Weeks
Package / Case TO-253-4, TO-253AA
Mounting Type Surface Mount
Mount Surface Mount
Contact Plating Tin
Number of Pins 4Pins
Transistor Element Material SILICON
hFEMin 125
Number of Elements 2 Elements
Collector-Emitter Saturation Voltage 650mV
Collector-Emitter Breakdown Voltage 30V
Published 2001
Packaging Tape & Reel (TR)
Operating Temperature 150°C TJ
JESD-609 Code e3
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC -30V
Max Power Dissipation 300mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating -100mA
Frequency 250MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BCV62
Reference Standard AEC-Q101
Polarity PNP
Element Configuration Dual
Power Dissipation 300mW
Halogen Free Not Halogen Free
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA ICBO
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Transition Frequency 250MHz
Max Breakdown Voltage 30V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 6V
Width 2.9mm
Length 2.9mm
Height 1mm
RoHS Status ROHS3 Compliant
REACH SVHC No SVHC
Lead Free Lead Free
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