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BCX41E6327HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - Single
Manufacturer Infineon
Factory Lead Time 4 Weeks
Package / Case TO-236-3, SC-59, SOT-23-3
Mount Surface Mount
Mounting Type Surface Mount
Number of Pins 3Pins
Transistor Element Material SILICON
hFEMin 63
Collector-Emitter Saturation Voltage 900mV
Collector-Emitter Breakdown Voltage 125V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e3
Pbfree Code yes
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated DC 125V
Max Power Dissipation 330mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 800mA
Frequency 100MHz
Base Part Number BCX41
Voltage 125V
Element Configuration Single
Current 8A
Power Dissipation 330mW
Transistor Application SWITCHING
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 200mA 1V
Current - Collector Cutoff (Max) 10μA
Vce Saturation (Max) @ Ib, Ic 900mV @ 30mA, 300mA
Transition Frequency 100MHz
Max Breakdown Voltage 125V
Collector Base Voltage (VCBO) 125V
Emitter Base Voltage (VEBO) 5V
Width 1.3mm
Length 2.9mm
Height 900μm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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