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BF799WH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 20V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3Terminations
ECCN Code EAR99
Max Power Dissipation 280mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 1.1GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BF799
Configuration SINGLE
Power Dissipation 280mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 20mA 10V
Transition Frequency 1100MHz
Frequency - Transition 800MHz
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) 3V
Noise Figure (dB Typ @ f) 3dB @ 100MHz
RoHS Status RoHS Compliant
Lead Free Lead Free
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