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BF888H6327XTSA1 Tech Specifications

Category Transistors - FETs, MOSFETs - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Package / Case SOT-343
Number of Elements 1 Element
Packaging Tape & Reel (TR)
Published 2010
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Additional Feature LOW NOISE
Max Power Dissipation 160mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 47GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G4
Polarity NPN
Configuration SINGLE
Power Dissipation 160mW
Case Connection EMITTER
Transistor Application SWITCHING
Collector Emitter Voltage (VCEO) 4V
Max Collector Current 30mA
Transition Frequency 47000MHz
Collector Base Voltage (VCBO) 13V
Emitter Base Voltage (VEBO) 1.2V
RoHS Status ROHS3 Compliant
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BF888H6327XTSA1 Documents

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