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BF998E6327HTSA1 Tech Specifications
| Category | Transistors - FETs, MOSFETs - RF | |
| Manufacturer | Infineon | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Package / Case | TO-253-4, TO-253AA | |
| Number of Pins | 4Pins | |
| Number of Elements | 1 Element | |
| Usage Level | Military grade | |
| Packaging | Tape & Reel (TR) | |
| Published | 2001 | |
| JESD-609 Code | e3 | |
| Pbfree Code | yes | |
| Part Status | Not For New Designs | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 150°C | |
| Min Operating Temperature | -55°C | |
| Voltage - Rated DC | 12V | |
| Max Power Dissipation | 200mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Current Rating | 30mA |
| Frequency | 45MHz | |
| Base Part Number | BF998 | |
| Pin Count | 4 | |
| Configuration | SINGLE | |
| Number of Channels | 1Channel | |
| Operating Mode | DUAL GATE, DEPLETION MODE | |
| Case Connection | SOURCE | |
| Current - Test | 10mA | |
| Halogen Free | Not Halogen Free | |
| Transistor Type | N-Channel | |
| Continuous Drain Current (ID) | 30mA | |
| Gate to Source Voltage (Vgs) | 8V | |
| Gain | 28dB | |
| Drain Current-Max (Abs) (ID) | 0.03A | |
| Input Capacitance | 1.2pF | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Noise Figure | 2.8dB | |
| Height | 1mm | |
| Length | 2.9mm | |
| Width | 1.3mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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BF998E6327HTSA1 Documents
Download datasheets and manufacturer documentation for BF998E6327HTSA1
- DatasheetsBF998 ~ BF998E6327HTSA1-Infineon-datasheet-11795209.pdf BF998E6327-Infineon-datasheet-43594.pdf
- PCN PackagingRecyclable Glass Carrier 14/Oct/2014 Carrier Tape Update 03/Jun/2015
- Other Related DocumentsPart Number Guide
- ConflictMineralStatementInfineon-company-51.pdf
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