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BFP181E7764HTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-253-4, TO-253AA
Number of Pins 4Pins
Transistor Element Material SILICON
Current-Collector (Ic) (Max) 20mA
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Voltage - Rated DC 12V
Max Power Dissipation 175mW
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 20mA
Frequency 8GHz
Base Part Number BFP181
Configuration SINGLE
Power Dissipation 175mW
Transistor Application AMPLIFIER
Halogen Free Not Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 70mA 8V
Gain 17.5dB ~ 21dB
Transition Frequency 8000MHz
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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