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- BFP183WH6327XTSA1
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BFP183WH6327XTSA1 Tech Specifications
| Category | Transistors - Bipolar (BJT) - RF | |
| Manufacturer | Infineon | |
| Factory Lead Time | 4 Weeks | |
| Contact Plating | Tin | |
| Mount | Surface Mount | |
| Mounting Type | Surface Mount | |
| Package / Case | SC-82A, SOT-343 | |
| Number of Pins | 4Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 12V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 150°C TJ | |
| Packaging | Tape & Reel (TR) | |
| Published | 2014 | |
| JESD-609 Code | e3 | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 4Terminations | |
| ECCN Code | EAR99 | |
| Max Power Dissipation | 450mW | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Frequency | 8GHz |
| Base Part Number | BFP183 | |
| Element Configuration | Single | |
| Power Dissipation | 450mW | |
| Transistor Application | AMPLIFIER | |
| Halogen Free | Halogen Free | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 12V | |
| Max Collector Current | 65mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 15mA 8V | |
| Gain | 22dB | |
| Transition Frequency | 8000MHz | |
| Max Breakdown Voltage | 12V | |
| Frequency - Transition | 8.5GHz | |
| Collector Base Voltage (VCBO) | 20V | |
| Emitter Base Voltage (VEBO) | 2V | |
| Noise Figure (dB Typ @ f) | 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz | |
| Height | 900μm | |
| Length | 2mm | |
| Width | 1.25mm | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant | |
| Lead Free | Lead Free |
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BFP183WH6327XTSA1 Documents
Download datasheets and manufacturer documentation for BFP183WH6327XTSA1
- DatasheetsBFP183W
- Other Related DocumentsPart Number Guide
- PCN PackagingRecyclable Glass Carrier 14/Oct/2014 Reel Cover Tape Chg 16/Feb/2016
- Simulation ModelsInfineon-RFTransistor-AWR_MWO_Design_Kit-SM-v02_10-EN Spice Model
- ConflictMineralStatementInfineon-company-51.pdf
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