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BFP420FH6327XTSA1 Tech Specifications

Category Transistors - Bipolar (BJT) - RF
Manufacturer Infineon
Factory Lead Time 8 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-SMD, Flat Leads
Number of Pins 4Pins
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 5.5V
Number of Elements 1 Element
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4Terminations
ECCN Code EAR99
Max Power Dissipation 160mW
Terminal Position DUAL
Frequency 25GHz
Base Part Number BFP420
Configuration SINGLE
Power Dissipation 210mW
Power - Max 160mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.5V
Max Collector Current 35mA
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA 4V
Gain 19.5dB
Transition Frequency 25000MHz
Max Breakdown Voltage 5.5V
Collector Base Voltage (VCBO) 15V
Emitter Base Voltage (VEBO) 1.5V
Collector-Base Capacitance-Max 0.3pF
Noise Figure (dB Typ @ f) 1.1dB @ 1.8GHz
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
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